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The production and evolution of A-centers and divacancies in p-type Si irradiated at 80 K is studied. The emergence and development of A-centers advocates the notion that part of them at low temperature have an electrically neutral structure which converts to the normal active configuration gradually, at higher temperatures. Small yet characteristic variations of the V2, and (O-V) concentrations around room temperature are explained by considering the reaction processes occurring in this temperature range leading to the liberation of Sii and V.
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C. A. Londos (1992) studied this question.
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