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Deep-level transient spectroscopy (DLTS) measurements are reported for the well-studied carbon (C) and oxygen (O) related centers with activation energy aroundEv+ 0.36 eV irradiated p-Si. Comparisons of the concentrations of this defect state with those of carbon interstitial (Ci) defect state in pulled and float-zone material have been considered. The results yield some new insight concerning the Ciinvolvement in reactions with primary defects and other impurities a) during and after low-temperature irradiation and b) after annealing around room temperature.
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C. A. Londos (1988) studied this question.
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