A bistable defect in electron-irradiated boron-doped silicon

DLTS studies are reported on certain defects introduced in boron-doped floating-zone silicon after 1.5 MeV electron irradiation at 80K. A defect which appeared after annealing out of the vacancy was seen to exist in two charge state related metastable configurations. Two levels at E v +0.31 eV and E v +0.37 eV are attributed to one of these configurations: a level at <or approximately=E v +0.13 eV to the other. The evidence suggests that the defect is the boron substitutional-vacancy complex.