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In the hetero-epitaxial growth of cubic ZnS on a GaP(100) substrate using an open-tube method with hydrogen gas, it was found that the incorporation of indium greatly improved the surface morphology of the ZnS epitaxial layer. The role of indium in the growth kinetics has been studied. The concentration of indium was estimated to be 1018-1019 cm-3. Photoluminescence measurements showed that the incorporation of indium reduced some of the defects that had caused emission peaking at 470 nm.
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Goto et al. (1986) studied this question.
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