Formation of Embedded Monocrystalline NiSi2 Grid Layers in Silicon by MBE

Overgrowth of monocrystalline silicon films has been achieved by the molecular beam epitaxy technique on patterned NiSi2 layers which were epitaxially grown on Si(111) substrates. The embedded NiSi2 grid layer can be used as the gate in a permeable base transistor and can form buried electrodes in other novel devices.