In-plane electronic transport in thin layered magnetic structures composed of two ferromagnetic films separated by a nonmagnetic spacer is analyzed theoretically in the Born approximation. Particular attention is paid to the role of interface roughness in the giant magnetoresistance (GMR) effect. The analysis applies to self-affine interfaces described by the k-correlation model. Our results show that GMR is sensitive to the roughness exponent H (0⩽H⩽1) in a manner that depends on spin asymmetries for bulk and interfacial scattering. The limit of low electron concentration is also considered.
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Barnaś et al. (1997) studied this question.
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