A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of the high gate efficiency and low parasitic capacitance of the top-gate device geometry, the gain of the graphene frequency doubler is increased about ten times compared to that of the back-gate G-FET based device. The frequency response of the frequency doubler is also pushed from 10 kHz for a back-gate device to 200 kHz, at which most of the output power is concentrated at the doubled fundamental frequency of 400 kHz.
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Wang et al. (2010) studied this question.
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