The valence band offsets in Si/Si 1-y Ge y /Si strained-layer heterostructures with 0<y<0.14 have been determined by CV measurements and from the analysis of Kroemer. Good agreement is obtained with theoretical predictions of values in the range 0 to 0.1 eV. Extracted interface charge densities are consistent with values deduced from parallel transport measurements in 2DHG structures.
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Brighten et al. (1993) studied this question.
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