The characteristics of Si0.2Ge0.8channel PFETs fabricated directly on Si (110) surfaces have been investigated. The saturation drain current and the hole mobility of a Si0.2Ge0.8(110) PFET are enhanced by 70% and by 80% for thechannel, as compared with that of a bulk Si (110) PFET. For comparison with a Si (100) PFET, a SiGe/(110) PFET has ~ 200% hole mobility enhancement. The performance difference of the SiGe/(110) and/(110) PFET is about 2.7 times when considering mobility, and these effects are explained.
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Lee et al. (2010) studied this question.
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