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January 1, 1964Journal of The Electrochemical SocietyOpen Access

Evidence for Oxidation Growth at the Oxide-Silicon Interface from Controlled Etch Studies

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WPW. A. PliskinIBM (United States)RGR. P. GnallAT&T (United States)

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Pliskin et al. (1964) studied this question.

synapsesocial.com/papers/6a93b1da3bc26c9bae37dfe3https://doi.org/10.1149/1.2426271
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