The barrier height of Schottky diodes formed with 〈111〉 and 〈100〉 n-type silicon substrates and Rh, RhSi, Rh4S5, and Rh3Si4 have been determined by means of photoresponse, capacitance, and forward current-voltage measurements. The results are compared to the results previously obtained with iridium, and with other plantinum related elements.
No takes yet. Share an insight, caveat, or question.
Pires et al. (1980) studied this question.
Synapse has enriched 4 closely related papers on similar clinical questions. Consider them for comparative context: