A double-peak structure is observed in the Cu concentration profile after low-energy pulsed-laser irradiation of Cu-implanted Si. From the Cu surface segregation a primary melt depth is inferred. In addition, Cu segregation at the depth of the amorphous-crystal interface gives evidence for a secondary melt propagating through the amorphous layer towards the crystalline substrate. The results imply a large difference in melting temperature, heat of melting, and heat conductivity between amorphous Si and crystalline Si.
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Sinke et al. (1984) studied this question.
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