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A new method to analyze isothermal capacitance transients of Schottky barriers is proposed. Isothermal capacitance transients, recorded at different temperatures by an automatized measurement system, are analyzed by comparing the capacitance values at the same time but different temperatures. This method is similar to that used in the standard deep-level transient spectroscopy (DLTS), by inverting the role of time and temperature. The main parameters of the deep levels can be obtained as in the DLTS analysis. The analysis method is applied to Mo/GaAs Schottky barriers. Results have been compared with those obtained by standard DLTS analysis.
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Cola et al. (1991) studied this question.
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