Silicon layer transfer by hydrogen implantation combined with wafer bonding in ultrahigh vacuum

A layer transfer method was developed by combining in situ photothermal activation of hydrogen passivated surfaces, ultrahigh vacuum bonding, and hydrogen-implantation induced splitting. Structural and electrical investigations showed that ultrathin, single crystalline silicon layers can be transferred to appropriate substrates without the involvement of an intermediate layer such as an oxide or solder. Significant current flow across such produced silicon-silicon bonded interfaces was observed, making this approach very attractive for material integration.