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We calculate the low temperature resistivity in low-density two-dimensional hole gases in GaAs heterostructures by including screened charged impurity and phonon scattering in the theory. Our calculated resistance, which shows striking temperature-dependent nonmonotonicity arising from the competition among screening, nondegeneracy, and phonon effects, is in excellent agreement with recent experimental data.
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Sarma et al. (2000) studied this question.
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