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We use recently determined values of conduction- and valence-band edge deformation potentials to analyze two-dimensional electron and hole mobilities in GaAsAlₓGa_1-xAs modulation-doped heterostructures. Contrary to the commonly accepted view, it is shown that a consistent description of low-temperature mobility can be given only if the short-range deformation potential scattering is not screened by free carriers.
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W. Walukiewicz (1988) studied this question.
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