Epitaxial overgrowth of GaAs over nanometer-sized tungsten patterns is studied experimentally. The relationships between the quality of the overgrowth and geometrical parameters, such as crystallographic orientation, metal width, metal thickness, and grating period, are investigated. The overgrown structures are characterized using a scanning electron microscope at top surfaces and at cleaved edges, and by I-V measurements of Schottky diodes formed between the metal grid and the overgrown GaAs. It is established that it is possible to obtain a high-quality overgrowth layer with a completely planarized growth front within 200 nm of growth.
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Wernersson et al. (1995) studied this question.
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