Characterized herein are quantum-well Hall devices in Si-delta-doped Al/sub 0.25/Ga/sub 0.75/As/GaAs and pseudomorphic Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.25/Ga/sub 0.75/As/GaAs heterostructures, grown by low-pressure metal organic chemical vapor deposition method. The Si-delta-doping technique has been applied to quantum-well Hall devices for the first time. As a result high electron mobilities of 8100 cm/sup -2//V/spl middot/s with a sheet electron density of 1.5/spl times/10/sup 12/ cm/sup -2/ in Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.25/Ga/sub 0.75/As/GaAs structure and of 6000 cm/sup -2//V/spl middot/s with the sheet electron density of 1.2/spl times/10/sup 12/ cm/sup -2/ in Al/sub 0.25/Ga/sub 0.75/As/GaAs structure have been achieved at room temperature, respectively. From Hall devices in Al/sub 0.25/Ga/sub 0.75/As/In/sub 0.25/Ga/sub 0.75/As structure, the product sensitivity of 420 V/AT with temperature coefficient of -0.015 %/K has been obtained. This temperature characteristic is one of the best result reported. Additionally, a high signal-to-noise ratio corresponding to the minimum detectable magnetic field of 45 nT at 1 kHz and 75 nT at 100 Hz has been attained. These resolutions are among the best reported results.
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Lee et al. (1996) studied this question.
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