The three-dimensional effect of the potential profile in the channel of a bipolar-mode SIT (BSIT) is analytically discussed by using a very simple model. The basic performance of a BSIT is fundamentally determined by the potential barrier height at the intrinsic gate at the turn-off state, so that the effect of various structure parameters on the barrier height is discussed in detail to introduce the design rule of a BSIT. The operational principle of a BSIT is studied by using the two-dimensional numerical analysis, concentrating on the effect of geometrical parameter and impurity concentration on the potential distribution, electron, and hole density in the channel, as well as terminal characteristics.
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Nishizawa et al. (1982) studied this question.
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