Rapid crystallization of GeTe–Bi2Te3 mixed layer

We report rapid crystallization of GeTe–Bi2Te3 mixed layers. The as-deposited (GeTe)1−x(Bi2Te3)x (GBT) layers with x>0.5 are fcc crystalline, while the layers with x<0.5 are amorphous, for cosputter deposition at room temperature. We found that Bi2Te3 significantly enhances the crystallization of the GBT layers. Furthermore, both temperature and minimum time required for crystallization (Tc and tc,min) of GBT layers are smaller than those of (GeTe)1−x(Sb2Te3)x (GST) layers. For example, crystallization of GBT layer with x=0.12 occurs at 155.0°C within 30.9ns, which is around 1∕3 of 95.7ns for Ge2Sb2Te5 with Tc=168.5°C.