Photoinduced Memory with Hybrid Integration of an Organic Fullerene Derivative and an Inorganic Nanogap‐Embedded Field‐Effect Transistor for Low‐Voltage Operation

A photoinduced hybrid memory operating with a low voltage is demonstrated by embedding the fullerene derivative, [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), into a conventional silicon-channel FET with a nanogap, upon application of both electrical and optical pulses. The nanogap geometry allows high mobility, which is the same as that of conventional silicon and organic–inorganic hybrid integration without thermal instability.