Annealing temperature effects on the structure and electrical resistance of Ge 2 Sb 2 Te 5 thin film were studied. The crystallization and melting temperature of the thin film are about 175 degrees C and 610 degrees C respectively. The structure of the as-deposited and the annealed film at different annealing temperatures are identified by the x-ray diffraction method. The thin film changes from an amorphous state to the fcc structure at about 200 degrees C, and then changes into the hexagonal close-packed (hcp) structure at about 400 degrees C. Electrical resistance of as-deposited thin film reaches as high as 1.7×10 8 Ω/sq. Then it decreases to 1.6×10 4 Ω/sq and 165 Ω/sq after the annealing process at 250 degrees C and 400 degrees C respectively. The current–voltage curve of the Ge 2 Sb 2 Te 5 thin film is also investigated. Due to the large resistance difference between the amorphous, the fcc crystalline and the hcp crystalline states, Ge 2 Sb 2 Te 5 film may be used to realize multilevel storage for Ovonic unified memory.
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Zhang et al. (2004) studied this question.
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