The influence of the rate of defect generation on radiation-enhanced diffusion (RED) of preimplanted boron atoms in silicon due to postbombardment at 750 °C is investigated using SIMS-depth profiling. The generation rate is varied by the beam current density and the ion species, respectively. The excess diffusivity of boron increases proportional to the generation rate for light ion irradiation, but for production rates larger than about 0.2 s−1 displ./atom it decreases again. The rate effects are explained by a dynamical overlapping model.
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Holldack et al. (1987) studied this question.
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