The flux dependence of damage accumulation in silicon during Ne+-bombardment up to the mA/cm2 range is investigated using the Rutherford backscattering technique (RBS). The additional damage due to the flux effect shows an increase with the current density for all three target temperatures used. The results can be satisfactorily explained assuming a proportionality of the damage increase per atom to the dynamical overlapping probability of subsequently incoming ions during the lifetime of the mobile defects. It is assumed that the maximum damage increase due to double collision events corresponds to the case of molecule ion bombardment.
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Holldack et al. (1986) studied this question.
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