Answers are grounded in this paper and cite their sources.
The migration energies of an interstitial in germanium and silicon were calculated using attractive polarization energies and Born-Mayer type repulsive energies. The results are 0.25 eV and 0.22 eV for germanium and silicon, respectively. These values should be considered to be the upper limit values of migration energies.
No takes yet. Share an insight, caveat, or question.
Ryukiti R. Hasiguti (1966) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: