Ac electrical conductivity and dielectric relaxation behavior of amorphous Selinum36 Antimony31Cubber33 thin films

The alternating-current (Ac) conductivity measurements and dielectric behaviors were observed in the range of temperature (from 303 to 393 K) and in the frequency range from 102 to106 Hz for amorphous films of Selinum36 Antimony31 Cubber33 chalcogenide glass. The ac conductivity has temperature dependency and the frequency dependency. The reduction of the exponent S values with raising temperature was introduced with the correlated barrier hopping model. The maximum height of the barrier WM for Sellinum36 Antimony31Cubber33 films is reliable with carrier hopping over a potential barrier. The number of localized states per unit volume at the Fermi level enhances with the elevation of ambient temperature of the film sample. Both dielectric constant ε1 and loss ε2 increase with the rise of temperature rising and decrease with frequency. The computation of the dielectric modulus M/ and M// revealed that the interfacial is the most suitable polarization type.