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We have used Raman scattering to investigate the extent and nature of the damage caused by dry etching of GaAs samples. Damage has been seen to be confined to the first few hundred ångströms and has a correlation length larger than 250 Å. A sample on which ‘quantum dots’ had been etched has also been studied and a new feature observed in the spectrum. This is discussed in terms of a surface phonon mode.
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Watt et al. (1988) studied this question.
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