LiNbO 3 crystals with a composition close to stoichiometry were prepared by using a vapor transport equilibration (VTE) technique. The influence of the intrinsic defect density in the electric field periodic poling LiNbO3 crystal is studied. The switching field is found to decrease with the intrinsic defects. The reduction of intrinsic defects is mainly due to a change in the Li/Nb ratio in the LiNbO3 crystal, as a result of lithium diffusion during the VTE process. The switching field of ∼2 kV/mm in stoichiometric LiNbO3 is about one fourth of the previously published results obtained with near-stoichiometric crystals, and is approximately one tenth of the conventional congruent field. Periodic poling of thicker stoichiometric substrates was successfully performed by means of an electric field poling process at room temperature.
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Chen et al. (2002) studied this question.
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