We have investigated the nitrogen-plasma p-type doping properties of both the ZnBeSe-ternary and the ZnMgBeSe-quaternary wide-bandgap alloys grown by molecular-beam epitaxy on (001) GaAs substrates. We show that net acceptor concentrations in the 1017 cm−3 range can be obtained for a bandgap as high as 3.2 eV in the ternary ZnBeSe alloy. In contrast, the bandgap of ZnMgBeSe quaternary alloys lattice matched onto GaAs should not exceed 2.97 eV to reach comparable doping levels. Our results reveal the detrimental influence of both ZnS and MgSe compounds on the p-type doping of wide-bandgap II–VI alloys.
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Tournié et al. (1999) studied this question.
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