The p-type doping limit in ZnMgSSe was examined using an amphoteric native defect model. The results of measurements on p-type doping in ZnMgSSe were well reproduced with the band offset localized to the valence band in ZnSe/ZnMgSSe considering the growth temperature. This result is close to the one reported recently by Shahzad et al. [Appl. Phys. Lett. 67 (1995) 659], i.e., ΔE v≈0.9ΔE g. The results of measurements on p-type doping in ZnSSe were also well reproduced with the known band offset in ZnSe/ZnSSe. Although the doping efficiency is reduced for a larger energy gap in both material systems, the improvement of doping efficiency by increase of the growth temperature was predicted from the model.
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Hirano et al. (1997) studied this question.
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