What question did this study set out to answer?

To identify and characterize the electronic compensation mechanisms occurring in nitrogen-doped zinc selenide grown via molecular beam epitaxy.

Compensation processes in nitrogen doped ZnSe

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Experimental study demonstrates deep donor compensation in nitrogen-doped zinc selenide, indicating native defect complexes limit conductivity.

To identify and characterize the electronic compensation mechanisms occurring in nitrogen-doped zinc selenide grown via molecular beam epitaxy.
Grew nitrogen-doped ZnSe epitaxial layers using photoassisted molecular beam epitaxy.
Conducted temperature-dependent optical emission spectroscopy and measured carrier concentration profiles over time.
Identified two independent donor–acceptor pair emission processes in photoassisted grown ZnSe layers.
Determined that heavily doped material contains a deep compensating donor with a binding energy of 44 meV.
Observed temporal changes in carrier concentration profiles consistent with a (VSe-Zn-NSe) native defect complex model.

Hauksson et al. (1992) studied this question.

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Experimental study demonstrates deep donor compensation in nitrogen-doped zinc selenide, indicating native defect complexes limit conductivity.