Answers are grounded in this paper and cite their sources.
Spectroscopic analysis reveals midgap deep donor states in nitrogen-doped ZnSe films, indicating a primary mechanism for shallow acceptor compensation.
A new carrier compensation mechanism has been investigated in nitrogen-doped ZnSe films grown by low-pressure metalorganic vapor phase epitaxy. Photoconduction spectrum measurements have revealed the existence of deep defect levels located just above the center of the band gap in N-doped, highly compensated films. These results combined with photo-Hall measurements (under infrared illumination) have revealed that these midgap defect levels act as deep donors, and play an important role in carrier compensation in shallow acceptor doped ZnSe films.
No takes yet. Share an insight, caveat, or question.
Ohki et al. (1991) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: