High p-type doping of ZnBeSe using a modified delta-doping technique with N and Te

High crystalline quality ZnBeSe epilayers were grown nearly lattice matched to GaAs (001) substrates by molecular beam epitaxy with a Be–Zn co-irradiation. A (1×2) reflection high energy electron diffraction pattern was observed after the Be–Zn co-irradiation of the GaAs (2×4) surface. A high p-type doping level of 1.5×1018 cm−3 was achieved for (N+Te) triple-delta doping (δ3 doping) of ZnBeSe epilayers, whereby three adjacent δ layers of N and Te were deposited in each doping cycle. X-ray diffraction measurements reveal that (N+Te) δ3-doped ZnBeSe samples with a Te concentration of about 0.5% remain of very high crystalline quality with an X-ray rocking curve linewidth of 51 arcsec. Low temperature photoluminescence measurements show some emission peaks related to Te2 clusters and/or Ten⩾3 clusters.