We have performed 4 K magnetotransport measurements on almost intrinsic InAs/GaSb multi quantum wells under hydrostatic pressure. Through careful configuration of the growth we are able to produce samples that have differing interface monolayers (either InSb or GaAs). Analysing the data to obtain the overlap Δ we find that InSb interface samples have an overlap 30 ± 10 meV larger than GaAs in good agreement with recent theoretical predictions.
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Daly et al. (1996) studied this question.
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