Submicron feature size InGaAs metal-semiconductor-metal (MSM) photodetectors with 3-dB bandwidths in excess of 40 GHz are demonstrated. Devices with a 0.3-μm-thick active layer and an interelectrode spacing of <0.5 μm show a roll-off of the frequency response of /spl les/2 dB up to 40 GHz when operated at 5-V bias under front illumination with 1.3-μm light.
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Böttcher et al. (1996) studied this question.
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