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February 24, 1992Applied Physics Letters

Resonant-cavity InGaAlAs/InGaAs/InAlAs phototransistors with high gain for 1.3–1.6 μm

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ADAnanth DodabalapurAgency for Science, Technology and ResearchTCT. Y. ChangBooz Allen Hamilton (United States)

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Dodabalapur et al. (1992) studied this question.

synapsesocial.com/papers/6a93fa9209f426568000dbdfhttps://doi.org/10.1063/1.106464
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