A fully analytical model to describe the high‐frequency behavior of p‐i‐n photodiodes

This paper presents a novel fully analytical model describing the high‐frequency behavior of p‐i‐n photodiodes. The transport equations are solved, taking into account the dependence of the carrier velocities on the electric field, while the RC‐product effect is considered by adding the displacement current in the current equations. The model yields a fully analytical expression for both the bandwidth and quantum efficiency as a function of electrical and geometrical photodiode parameters, as well as material properties.