Electroluminescence (EL) in gold-coated porous silicon has been studied under pulse excitation. The room temperature EL is independent of ambient, unlike photoluminescence (PL). It decreases after 30 min annealing treatments, disappearing after about 480 °C, whereas the PL from either a similar or the same sample, observed through the gold contact, is strongly reduced after the same treatment at about 350 °C. The EL peak wavelength, unlike PL, shows no spectral shift on annealing. It is deduced that the origin of the EL is different from that of PL, and is consistent with silicon monohydride.
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Sabet-Dariani et al. (1994) studied this question.
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