A charge transport mechanism in double oxide-nitride dielectric was studied experimentally and theoretically. We have found that widely accepted Frenkel effect or thermally assisted tunneling could not explain experimental current-field-temperature dependences. For the first time we demonstrate that ionization mechanism of deep traps, which control charge transport in silicon nitride, is due to multiphonon process.
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Nasyrov et al. (2002) studied this question.
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