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Systematic optimization of molecular beam epitaxy growth parameters enabled high quality heteroepitaxy of In 2 Se 3 on Si(111) surfaces. Surfaces of the best epilayers were characterized by atomically flat terraces that extended laterally for several hundred nanometers. These terraces were separated by single quintuple layer high steps. These In 2 Se 3 films were suitable for subsequent high quality epitaxy of Bi 2 Se 3 . The quality of the In 2 Se 3 /Bi 2 Se 3 interface was confirmed using atomic resolution transmission electron microscopy.
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Rathi et al. (2014) studied this question.
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