Interface disorder in GaAs/AlGaAs quantum wells grown by molecular beam epitaxy on 0.5°-misoriented (111)B substrates

The interface disorder in quantum wells (QW’s) grown by molecular beam epitaxy on 0.5°-misoriented (111)B GaAs substrates was characterized by low-temperature photoluminescence and by transmission electron microscopy. It was found that the abruptness of the heterointerface of (111)B QW’s is as sharp as that of (100) QW’s. The effect of growth interruption at a high substrate temperature of 720 °C on the interface disorder was also studied and was found to be detrimental.