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The effect of variation of oxide thickness on the drain-induced barrier lowering, simulation parameter of a conventional MOSFET has been studied, first theoretically by proposing a new numerical method and then verifying by simulating with Sentaurus TCAD Toolkit. Since SiO2has its limitations at very low oxide thicknesses, improvement in the performance of the MOS by using high- K dielectric material for gate-channel isolation has also been studied.
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Das et al. (2013) studied this question.
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