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Determine whether single-layer antiferromagnetic CuMnAs memory cells exhibit deterministic multi-level switching and compatibility with standard microelectronic platforms.

May 19, 2017Nature CommunicationsOpen Access

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

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Determine whether single-layer antiferromagnetic CuMnAs memory cells exhibit deterministic multi-level switching and compatibility with standard microelectronic platforms.
Fabricated elementary-shape memory cells using a single layer of the antiferromagnet CuMnAs deposited on III-V or silicon substrates.
Integrated the memory cell into a standard printed circuit board operated and powered under ambient conditions through a computer USB interface.
Evaluated device switching behavior and durability using electrical pulses scaled down to picosecond durations across thousands of cycles.
Achieved deterministic multi-level switching capable of counting and recording thousands of consecutive input pulses.
Demonstrated ultrafast switching responses to electrical pulses with durations scaled down to hundreds of picoseconds under ambient operating conditions.

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Implication

Experimental study demonstrates deterministic multi-level switching in CuMnAs memory cells, indicating viable integration with conventional microelectronics for ultrafast computing.

Cite This Study

Olejník et al. (2017) studied this question.

synapsesocial.com/papers/6a9426ca235a0bf22c92e257 https://doi.org/10.1038/ncomms15434

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Implication

Experimental study demonstrates deterministic multi-level switching in CuMnAs memory cells, indicating viable integration with conventional microelectronics for ultrafast computing.

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

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Discussion

Implication

Cite This Study

Antiferromagnetic CuMnAs multi-level memory cell with microelectronic compatibility

Key Points

Discussion

Implication

Cite This Study

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