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Electrostatic modulation on the two-dimensional transport of the LaAlO3/SrTiO3 interface in an electric double-layer transistor is demonstrated. The induced insulator-to-metal transition exhibits the nature of charge-density-driven percolation, and the Kondo effect governs the low-temperature interface transport under high bias. The results underscore the important role of inhomogeneity and localized spins in the two-dimensional transport of oxide interfaces.
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Lin et al. (2013) studied this question.
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