A novel enhanced electric-field impact-ionization MOS (E2I-MOS) is proposed, which achieves a subthreshold swing of as low as 6 mV/dec at room temperature while reducing the breakdown voltage by about 1.8 V. The E2I-MOS exhibits ≥ 10 × lower off-state leakage compared to previously reported I-MOS structures, thus reducing the power consumption and also making the device more scalable. A very high on current of the order of 1 mA/μm can be obtained. Additionally, the device reliability is expected to be improved by confining hot carrier generation away from the gate dielectric region.
No takes yet. Share an insight, caveat, or question.
Sarkar et al. (2010) studied this question.
Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context: