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April 27, 1998Applied Physics Letters

Suppression of electron and hole leakage in 1.3 μm AlGaInAs/InP quantum well lasers using multiquantum barrier

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JPJen-Wei PanHengshui UniversityKCKen-Gi ChauNational Central UniversityJCJen-Inn ChyiNational Central University

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Pan et al. (1998) studied this question.

synapsesocial.com/papers/6a942dc59fbe5f86ceb95f0ahttps://doi.org/10.1063/1.121285
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Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 10.98-μm InGaAs-InGaP strained quantum-well lasers with GaAs-InGaP superlattice optical confinement layer1995 · 6 citations
  2. 2Carrier confinement by multiple quantum barriers in 1.55 μm strained GaInAs/AlGaInAs quantum well lasers1995 · 14 citations
  3. 3High-performance uncooled 1.3-μm Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP strained-layer quantum-well lasers for subscriber loop applications1994 · 338 citations
  4. 4Enhanced carrier confinement effect by the multiquantum barrier in 660 nm GaInP/AlInP visible lasers1991 · 82 citations
  5. 5Temperature dependence of GaAs/AlGaAs multiquantum barrier lasers1992 · 10 citations