16 × 16 Solar-Blind UV Detector Based on β-Ga 2 O 3 Sensors

In this work, a16× 16Ga2O3photodetector array is introduced. The Ga2O3thin film was deposited onc-sapphire substrate by employing metal-organic chemical vapor deposition, and the array device was constructed via UV photolithography, lift-off and electron-beam evaporation techniques. The high rejection ratio of8× 10 ^3indicate good wavelength selectivity. The photodetector displayed responsivity of 60.7 A W−1, specific detectivity of2.2× 10 ^14cm√Hz\,\,W^-1(Jones), external quantum efficiency of3× 10 ^4%, linear dynamic region of 120.34 dB, respectively. Excited by a laser, the photodetector had a rise time of 6 ms and a decay time of 48 ms, suggesting a fast response ability for tracing light signal. For the 256 pixels in this array, the dark current locates from 2 pA to 4 pA, and shown no disparity. More than 75% of the units have a maximum standard deviation of less than 10%. This work could show a guidance for advancing the solar-blind UV sensing devices and further applications.