LOW-TEMPERATURE EPITAXY OF β-SiC BY REACTIVE DEPOSITION

Formation of β-SiC on SiC by the reactive evaporation or reactive sputtering of Si in C2H2 was investigated. Use of values of relative C2H2:Si impingement rate > 30 avoided unreacted Si in the films. Epitaxial films were obtained on β-SiC and α-SiC at temperatures as low as 1100 and 1150°C, respectively. The occurrence of epitaxial temperatures several hundred degrees lower than for deposition by chemical vapor deposition is discussed in terms of deposition rate. Junction properties were observed for n-type β-SiC deposits on p-type SiC.