β-Silicon Carbide Films

films were grown in a horizontal reactor using a flow system in either H 2 or argon carrier gas. Substrates used were silicon single crystals, hexagonal platelets, and sapphire. Films were grown by three essentially different methods; namely, ( i ) reaction of pyrocarbon (from or ) with substrate silicon atoms, ( ii ) reaction of and , and ( iii ) pyrolysis of . The quality and the growth mechanisms of films grown under different reaction conditions are discussed. It is inferred from the results of the pyrocarbon reaction that silicon diffuses through the initially formed film and reacts with surface carbon atoms. Infrared absorption spectra indicate that the growth rate of thin films of depends on the orientation of the silicon substrates. Electron diffraction patterns indicate ordered films of .