A new boundary condition for the computer simulation of Schottky barrier diodes is proposed. In this model the electron transport analysis can be extended to higher bias voltages by utilizing a current-dependent surface recombination velocity which is based on a drifted Maxwellian distribution of carrier velocities. Calculations based on this revised boundary condition predict a depletion of electrons at the Schottky boundary compared with an accumulation predicted in previously published calculations.
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Adams et al. (1986) studied this question.
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